One dimensional transport in silicon nanowire junction-less field effect transistors

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http://eprints.org/relation/isVersionOf https://researchdata.gla.ac.uk/id/document/1294 http://eprints.org/relation/isVolatileVersionOf https://researchdata.gla.ac.uk/id/document/1294 http://eprints.org/relation/isIndexCodesVersionOf https://researchdata.gla.ac.uk/id/document/1294 archive 10322 disk0/00/00/04/14 2017-05-24 09:29:36 2024-04-16 14:25:17 2017-05-24 09:29:36 data_collection show Mirza Muhammad Schupp Felix J. Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK Mol Jan A. Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK MacLaren D. A. Briggs G. Andrew D. Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK Paul Douglas J. glaresearchdata:2017-05-24-414 One dimensional transport in silicon nanowire junction-less field effect transistors 30300000 Raw electron microscopy and electrical characterisation data underpinning the figures presented in the manuscript. 2017-05-24 University of Glasgow 10.5525/gla.researchdata.414 Mixed University of Glasgow 50329 5 Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit Leroy Cronin Engineering and Physical Sciences Research Council (EPSRC) EP/H024107/1 CHEM - CHEMISTRY 69430 1 Engineering Quantum Technology Systems on a Silicon Platform Douglas Paul Engineering and Physical Sciences Research Council (EPSRC) EP/N003225/1 ENG - ENGINEERING ELECTRONICS & NANO ENG FALSE EN 2014 2015 2027-05-24 R FALSE FALSE One dimensional transport in silicon nanowire junction-less field effect transistors http://eprints.gla.ac.uk/id/eprint/140323