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CREATOR: Douglas J. Paul (Douglas.Paul@glasgow.ac.uk)

IDENTIFIER: 

TITLE: Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

JOURNAL: Optics Express

AUTHORS: K. Gallacher,1 M. Ortolani,2 K. Rew,1 C. Ciano,3 L. Baldassarre,2 M. Virgillio,4 G. Scalari,5 J. Faist,5 L. Di Gaspare,3 M. De Seta,3 G. Capellini,3,6 T. Grange,7 S. Birner,7 and D.J. Paul,1
1 University of Glasgow, James Watt School of Engineering, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, U.K.
2 Dipartimento di Fisica, Universita di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
3 Dipartimento di Scienze, Universita di Roma Tre, Roma, 00146, Italy
4 Università di Pisa, Dipartimento di Fisica “Enrico Fermi”, Largo Pontecorvo 3, I-56127 Pisa, Italy 
5 Institute for Quantum Electronics, ETH Zurich, Zurich, 8093, Switzerland
6 IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
7 nextnano GmbH, Lichtenbergstr. 8, Garching bei München 85748, Germany

DATES: project started November 2017, project end October 2020, data released January 2020

SUBJECT: Complex refractive indices of n-Ge for doping of 3e19 cm^-3, 1e18 cm^-3 and nominally undoped at 300 K over the frequency range 0.060606 THz (4.95 mm wavelength) to 121.21 THz (2.48 micrometre wavelength). p-Si0.1Ge0.9, p-Si0.2Ge0.8 and p-Si0.3Ge0.7 complex refractive indices at 300 K over the frequency range 0.060606 THz (4.95 mm wavelength) to 121.21 THz (2.48 micrometre wavelength). The temperature dependent complex refractive indices of n-Ge over the frequency range 0.060606 THz (4.95 mm wavelength) to 121.21 THz (2.48 micrometre wavelength).

FUNDERS: This work was supported by the EC H2020 FET Project No. 766719 FLASH.

RIGHTS: University of Glasgow

METHODOLOGY: A Bruker 66vs FTIR spectrometer with a cryogenically cooled Si bolometer was used to measure a range of nominally undoped (p-type background below ∼ 5 × 10^15 cm−3) Si1−xGex (x = 0.7, 0.8 and 0.9) and doped n-Ge samples. Ge and SiGe thin film of thickness varying from 400 to 2000 nm were grown by chemical vapor deposition on silicon wafers. Square dies of 1×1 cm^2 were cut from the wafers, mounted in a transmission/reflection sample holder and measured by FTIR spectroscopy. The reflectance and transmittance spectra are separately acquired in two different optical beam path configurations, but the sample has not been unmounted between the two measurements. 512 scans at resolution 4 cm−1 in rapid-scan mode were acquired for each sample.

DATA: The data is provided in tab delimited text files.

USE: Any use of the data is subject to a Creative Commons license (CC BY 4.0) and the Optics Express paper which first published the data should be cited. Two png images files are also provided of the data plotted up to 8 THz.