The folder FIBSEM contains images collected during the preparation of the cross-sectional sample used for electron microscopy characterisation. These tif images were all collected using the proprietary control software for the FEI Nova DualBeam Focused Ion Beam instrument mentioned in the manuscript.

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The folder 'SpectrumImage' contains electron microscopy data underpinning the elemental map that is inset in Fig. 2 of the main manuscript. These raw data files are collected in Gatan's Digital Micrograph file format (details at the time of writing are advertised at: http://www.gatan.com/products/tem-analysis/gatan-microscopy-suite-software). Data were acquired using a JEOL ARMcFEG instrument operated at 200kV, using a Gatan Quantum electron spectrometer for EELS measurements (see manuscript for details). The software was current in 2014 and can be opened using all Digital Micrograph versions available since then.

Some of the methodology used for processing can be found in Ref. 1, below. See also Gatan product information for details of methodology and analysis, which includes centring of the 'zero loss peak' and background subtraction of the elemental core-loss edges.

The files are: the 'Survey Image' showing the location of data acquisition; the low and high loss EELS spectrum images used for elemental mapping; the (xray) EDS data used for determining the location of Pt; and the HAADF signal acquired simultaneously. Metadata in the original files specify many of the experimental conditions but has not been checked for accuracy. Probe and detector angles are approximately: alpha = 22 mrad and beta=36mrad. 

[1] J Bobynko, I MacLaren, AJ Craven, Ultramicroscopy 149 (2015) 9.

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The folder entitled 'TEM' contains conventional transmission electron microscopy data of the nanowire presented in fig. 1 of the manuscript. Images were collected at various magnifications using the same Gatan software as indicated above. The Fourier Transform tool was used to isolate and indicate the crystalline region highlighted in the paper, based on file A_10nmSD100nmG_0007.dm3 (which was also rotated for publication).

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File entitled '140323Suppl.xlsx' contains the raw electrical characterization data before analysis used in the main manuscript for the following figures:

Fig. 2: Gate Voltage vs Drain Current
Fig. 3b: Drain Voltage vs Drain Current (T=300K Vg= -0.25 to 2.00V)
Fig. 3c: Drain Voltage vs Drain Current (T=14 to T=300K for Vg=0)
Fig. 3d: Drain Voltage vs Drain Current (T=14 Vg=-0.25 to 2.00V)